摘要：随着电力电子应用越发趋于高压与高功率密度，单个模块已经无法满足其需求，功率器件的并联应用由于其经济性与可行性成为了解决该矛盾的有效方法。然而，并联系统的总体布局无法达到完全的对称，使得理想化的静、动态电流分布难以实现进而限制 ...

本文提出了一种优化的ANPC拓扑结构。该拓扑结构支持最新的1200-V SiC T-MOSFET与IGBT技术优化组合，实现成本效益。市场上将推出一款采用全集成ANPC拓扑结构的新型功率模块，适用于高度紧凑型、高效率1500-V并网逆变器。新开发的Easy3B功率模块在48kHz频率条件下 ...

TOKYO--(BUSINESS WIRE)--Mitsubishi Electric Corporation (TOKYO: 6503) announced today that beginning February 15 it will provide samples of its new LV100-type 1.2-kV IGBT module as an industrial-use ...

New power modules with solderable pin terminals have changed the structure of inverters in applications up to 20kW. The new EconoPACK+ package was designed to fill the gap between 20kW and 100kW ...

行业主要上市公司：宏微科技(688711);斯达半导(603290);华润微(688396);时代电气(688187);士兰微(600460);比亚迪(002594)等 1、中国IGBT芯片行业成本结构分析：IGBT芯片成本占模块材料成本的69.2% IGBT芯片主要成本由原材料成本、制造成本及人工费用等构成。从国内主要上市 ...

The MIXD600PF650TSF is a 600-V, 650-A IGBT module in the SimBus-F outline featuring high level of integration with only one power semiconductor module required for the whole drive. It is designed for ...

IXYS Corporation announced the introduction of a new range of IGBT modules for high power applications. The new IXYS SIMBUS F module is an industry standard outline optimized for IGBT phase leg ...

A lack of planarity along the interface between the solder and the ceramic raft in an IGBT module is a common anomaly that can make heat dissipation uneven across the die and cause the die to crack.

CYPRESS, Calif.--(BUSINESS WIRE)--Mitsubishi Electric US, Inc. announced a new version of its 2.0kV LV100 insulated-gate bipolar transistor (IGBT) module specifically designed for photovoltaic (PV) ...

Infineon is launching a new generation of 1,700V EconoDual IGBT modules at PCIM next week, using its IGBT7 die series. “With this new chip technology, the EconoDual 3 provides a current of 900A, and ...

Amongst a flurry of announcements, On Semiconductor has introduced 1.2kV 25, 35, and 50A transfer-moulded IGBT power modules – in converter-inverter-brake (CIB) and converter-inverter (CI) ...