Ferroelectric capacitors can be made as thin as 30nm to add memory between the metallisation layers of ICs, according to Institute of Science Tokyo. It “demonstrates strong electric polarisation ...

An ultrathin ferroelectric capacitor, designed by researchers from Japan, demonstrates strong electric polarization despite being just 30 nm thick including top and bottom electrodes—making it ...

Dublin, Jan. 30, 2026 (GLOBE NEWSWIRE) -- The "Ferroelectric Memory-Display Market Report 2026" has been added to ResearchAndMarkets.com's offering. The report provides comprehensive insights into the ...

Samsung Electronics is collaborating with Nvidia (NVDA) to accelerate the development of next-generation NAND flash memory ...

As system designers seek to manipulate larger data sets while reducing power consumption, ferroelectric memory may be part of the solution. It offers an intermediate step between the speed of DRAM and ...

Aluminum scandium nitride thin films could pave the way for the next generation of ferroelectric memory devices, according to a new study. Compared to existing ferroelectric materials, these films ...

As a part of JST PRESTO program, Associate professor Masaharu Kobayashi, Institute of industrial Science, The University of Tokyo, has experimentally clarified the operation mechanism of low voltage ...

Researchers reduce the total thickness of capacitor stacks while maintaining strong polarization properties. (Nanowerk News) Modern electronic technology is rapidly advancing towards miniaturization, ...

In a new Nature Communications study, researchers have developed an in-memory ferroelectric differentiator capable of performing calculations directly in the memory without requiring a separate ...

As a part of JST PRESTO program, associate professor Masaharu Kobayashi, Institute of industrial Science, The University of Tokyo, has experimentally clarified the operation mechanism of low voltage ...